Voltage drops, sawtooth oscillations and HF bursts in Breakdown Current and Voltage waveforms during UIS experiments

Author

Irace, A. ; Spirito, P. ; Riccio, M. ; Breglio, G.

Author_Institution

Dept. of Biomed., Electron. & Telecommun. Eng., Univ. of Naples Federico II, Naples, Italy

fYear

2012

fDate

3-7 June 2012

Firstpage

165

Lastpage

168

Abstract

The aim of this paper is to analyze the typical voltage and current waveforms of UIS test in order to find signature of uneven current conduction behavior. This information could help the identification of phenomena that can eventually lead to device failure, reduce its capability of sustaining high currents in avalanche operation or impair long-term device reliability.

Keywords

MOSFET; electric breakdown; failure analysis; semiconductor device reliability; semiconductor device testing; HF bursts; MOSFET; UIS test experiments; avalanche breakdown; breakdown current; current conduction behavior; current waveforms; device failure; impair long-term device reliability; sawtooth oscillations; unclamped inductive switching test; voltage drops; voltage waveforms; Avalanche breakdown; Current distribution; Heating; Inductors; Oscillators; Resistance; Avalanche Breakdown; Current filamentation; Infrared Thermography; Negative Differential Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on

Conference_Location

Bruges

ISSN

1943-653X

Print_ISBN

978-1-4577-1594-5

Electronic_ISBN

1943-653X

Type

conf

DOI

10.1109/ISPSD.2012.6229049

Filename

6229049