Characterization of gain- and index-guided InGaN multiple quantum well laser diodes

Author

Kneissl, M. ; Bour, D.P. ; Romano, L.T. ; Hofstetter, D. ; McCluskey, M.D. ; Donaldson, R. ; Dunnrowicz, C. ; Johnson, N.M.

Author_Institution

Electron. Mater. Lab., Xerox Palo Alto Res. Center, CA, USA

Volume

2

fYear

1998

fDate

3-4 Dec 1998

Firstpage

350

Abstract

We will discuss fabrication and characteristics of III-nitride based multiquantum well (MQW) laser diodes grown on c-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). The device structure includes a 4 μm GaN:Si lateral n-contact layer, 0.4 μm AlGaN cladding layers, and a InGaN multiple quantum well active region surrounded by 0.1 μm GaN:Si waveguide layers

Keywords

III-V semiconductors; MOCVD; gallium compounds; indium compounds; optical fabrication; quantum well lasers; refractive index; ridge waveguides; waveguide lasers; 0.4 mum; 4 mum; AlGaN; AlGaN cladding layers; GaN:Si; GaN:Si lateral n-contact layer; GaN:Si waveguide layers; III-nitride based multiquantum well laser diodes; InGaN; InGaN multiple quantum well active region; MOCVD; c-plane sapphire substrates; device structure; gain-guided InGaN multiple quantum well laser; index-guided InGaN multiple quantum well laser diodes; metal organic chemical vapor deposition; Diode lasers; Etching; Gallium nitride; Mirrors; Optical materials; Power generation; Space vector pulse width modulation; Temperature measurement; Threshold current; Waveguide junctions;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.739706

Filename

739706