Title :
Novel lateral 700V DMOS for integration: Ultra-low 85 mΩ ·cm2 on-resistance, 750V LFCC
Author :
Kim, Sunglyong ; Kim, Jongjib ; Prosack, Hank
Author_Institution :
ATG, Process Technol. Dev., Fairchild Semicond., South Portland, ME, USA
Abstract :
A new device concept which is able to break through the silicon limit has been introduced. LFCC (Lateral Floating-Capacitor-Coupled) structure with lateral trench array along drift layer makes drift dose higher than normal RESURF structure with high breakdown voltage. Three dimensional capacitive coupling helps electric field over drift region obtain trapezoidal shape which results in high breakdown voltage with relatively short drift length. Experimental results showed 85 mΩ·cm2 of specific Ron with 750V of breakdown voltage.
Keywords :
MOS integrated circuits; capacitors; DMOS; LFCC structure; RESURF structure; drift layer; lateral floating-capacitor-coupled structure; lateral trench array; silicon limit; voltage 700 V; voltage 750 V; Electric fields; Electrodes; Junctions; Leakage current; Logic gates; Silicon; Stress; Breakdown Voltage; Capacitively Coupled; LDMOS; LFCC; On resistance; RESURF; Stress; Trench;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2012.6229054
