• DocumentCode
    2473765
  • Title

    Novel lateral 700V DMOS for integration: Ultra-low 85 mΩ ·cm2 on-resistance, 750V LFCC

  • Author

    Kim, Sunglyong ; Kim, Jongjib ; Prosack, Hank

  • Author_Institution
    ATG, Process Technol. Dev., Fairchild Semicond., South Portland, ME, USA
  • fYear
    2012
  • fDate
    3-7 June 2012
  • Firstpage
    185
  • Lastpage
    188
  • Abstract
    A new device concept which is able to break through the silicon limit has been introduced. LFCC (Lateral Floating-Capacitor-Coupled) structure with lateral trench array along drift layer makes drift dose higher than normal RESURF structure with high breakdown voltage. Three dimensional capacitive coupling helps electric field over drift region obtain trapezoidal shape which results in high breakdown voltage with relatively short drift length. Experimental results showed 85 mΩ·cm2 of specific Ron with 750V of breakdown voltage.
  • Keywords
    MOS integrated circuits; capacitors; DMOS; LFCC structure; RESURF structure; drift layer; lateral floating-capacitor-coupled structure; lateral trench array; silicon limit; voltage 700 V; voltage 750 V; Electric fields; Electrodes; Junctions; Leakage current; Logic gates; Silicon; Stress; Breakdown Voltage; Capacitively Coupled; LDMOS; LFCC; On resistance; RESURF; Stress; Trench;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
  • Conference_Location
    Bruges
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4577-1594-5
  • Electronic_ISBN
    1943-653X
  • Type

    conf

  • DOI
    10.1109/ISPSD.2012.6229054
  • Filename
    6229054
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2473765