Title :
Improved efficiency in 2 μm broadened waveguide GaInAsSb/AlGaAsSb multiple quantum well lasers
Author :
Newell, T. ; Gray, A.L. ; Lee, H. ; Dorato, S. ; Lester, L.F.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
Broadened waveguide 2 μm GaInAsSb-AlGaAsSb QW lasers have low internal loss since the overlap between the lossy cladding regions and the optical field is small. However, a broadened waveguide increases the likelihood of recombination in the barrier region, especially if QW carrier confinement is poor, and could cause injection efficiency to decrease. In latticed-matched GaInAsSb-AlGaAsSb QWs, the valence band barrier is very small for a wide range of compositions
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; quantum well lasers; valence bands; waveguide lasers; 2 μm broadened waveguide GaInAsSb/A1GaAsSb multiple quantum well lasers; 2 mum; GaInAsSb-AlGaAsSb; GaInAsSb-AlGaAsSb QW lasers; QW carrier confinement; barrier region; injection efficiency; latticed-matched GaInAsSb-AlGaAsSb QWs; lossy cladding regions; low internal loss; optical field; valence band barrier; Aluminum; Artificial intelligence; Capacitive sensors; Electrons; Quantum well lasers; Radiative recombination; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739719
