Title :
4.5-kV multi-chip level-shift circuit using dedicated discrete IGBTs for driving high-power IGBTs
Author :
Sakurai, Naoki ; Takami, Kazumasa ; Yukutake, Seigo ; Kouno, Yusuke ; Sakano, Junichi
Author_Institution :
Hitachi Res. Lab., Hitachi Ltd., Hitachi, Japan
Abstract :
A 4.5-kV voltage level-shift circuit with a multi-chip structure composed of upper and lower arm driver ICs and dedicated discrete IGBTs was developed. It was experimentally confirmed that this level-shift circuit could drive a 3.3-kV/1200-A IGBT module.
Keywords :
driver circuits; insulated gate bipolar transistors; power electronics; current 1200 A; dedicated discrete IGBT; high-power IGBT; lower arm driver IC; multichip level-shift circuit; multichip structure; upper arm driver IC; voltage 3.3 kV; voltage 4.5 kV; voltage level-shift circuit; Insulated gate bipolar transistors; Integrated circuits; Inverters; Logic gates; MOSFETs; Optical fibers; Resistors; Driver IC; IGBT; level-shift; multi-chip;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2012.6229061
