Title :
Bit-pattern sensitivity analysis and optimal on-die-termination for high-speed memory bus design
Author :
Mintarno, Evelyn ; Ji, Steven Yun
Author_Institution :
Stanford Univ., Stanford, CA, USA
Abstract :
System IO power and performance are critical computer platform design parameters. IO power forms a significant portion of the overall power while its performance is often the bottleneck in achieving overall performance specification. This paper experimentally demonstrates, for the first time, optimal on-die-termination (ODT) schemes for DDR3-800 MT/s and DDR31067 MT/s, revealed by thorough bit-pattern sensitivity analysis. Optimal ODT at IO receiver pads is proposed as a new critical design knob to achieve optimized power-performance trade-offs, dramatically improving signal integrity and power consumption. The thorough bit-pattern sensitivity analysis was found to be 100% more accurate than traditional approach. Up to 50% reduction in power consumption, 100% increase in timing margin, and 100% increase in voltage margin were demonstrated as the impact of the choice of ODT. It is also promised to become more important in the future at higher data rate.
Keywords :
DRAM chips; low-power electronics; sensitivity analysis; DDR3- 1067 MT/s; DDR3-800 MT/s; DRAM ODT scheme; IO power; SDRAM; bit-pattern sensitivity analysis; high-speed memory bus design; low power consumption; optimal on-die-termination; optimized power-performance trade-offs; signal integrity; voltage margin; Crosstalk; Energy consumption; Intersymbol interference; Reflection; Resonance; Routing; Sensitivity analysis; Timing; Transmitters; Voltage;
Conference_Titel :
Electrical Performance of Electronic Packaging and Systems, 2009. EPEPS '09. IEEE 18th Conference on
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4244-4447-2
Electronic_ISBN :
978-1-4244-5646-8
DOI :
10.1109/EPEPS.2009.5338442