DocumentCode
2473967
Title
Typical electron beam doping (superdiffusion) of impurity atoms in damage-free regions of semiconductors by the kick-out mechanism
Author
Wada, T. ; Fujimoto, H. ; Asada, S.
Author_Institution
Dept. of Appl. Electron., Daido Inst. of Technol., Nagoya, Japan
fYear
2000
fDate
11-13 July 2000
Firstpage
198
Lastpage
199
Abstract
The present experiments of 750 keV electron beam doping (EBD) of Si atoms into GaAs layers were performed at room temperature. The concentration profiles of Si atoms measured by SIMS and PL in GaAs wafers were plotted as a function of depth from the GaAs surfaces. It has been reported that their profiles were in good agreement with the exact solutions of the kick-out mechanism.
Keywords
III-V semiconductors; diffusion; doping profiles; electron beam effects; gallium arsenide; photoluminescence; secondary ion mass spectra; semiconductor doping; silicon; 750 keV; GaAs:Si; SIMS; concentration profile; electron beam doping; impurity superdiffusion; kick-out mechanism; photoluminescence; semiconductor; Atomic beams; Atomic layer deposition; Atomic measurements; Electron beams; Gallium arsenide; Land surface; Semiconductor device doping; Semiconductor films; Semiconductor impurities; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-004-6
Type
conf
DOI
10.1109/IMNC.2000.872706
Filename
872706
Link To Document