DocumentCode
2473979
Title
The extraction and measurement of on-die impedance for power delivery analysis
Author
Liu, Xiaoping ; Liu, Yi-Feng
Author_Institution
Intel Corp., Chandler, AZ, USA
fYear
2009
fDate
19-21 Oct. 2009
Firstpage
195
Lastpage
198
Abstract
Power delivery system noise, current and impedance are the key performance factors for successful chipsets/CPUs design. Power delivery noise is significantly affected by on-die impedance and current, i.e., on-die power grid equivalent resistance (Rdie), capacitance (Cdie), and Icc(t). Rdie and Cdie have been challenging in pre-silicon extraction and post-silicon measurement. This paper focuses on Rdie and Cdie extraction and silicon correlation. We carried out Rdie and Cdie extraction comparison study for Intel products that contain several PHY blocks by using home-brew flow, a commercial tool, and lab measurement, to achieve good correlation. The work boosts our confidence in the accuracies of internal flow and commercial tool and therefore facilitates the adoption of the commercial tool to greatly improve die grid modeling effort.
Keywords
elemental semiconductors; microprocessor chips; silicon; Cdie extraction; Intel products; Rdie extraction; Si; commercial tool; home-brew flow; internal flow; lab measurement; on-die impedance; on-die power grid equivalent capacitance; on-die power grid equivalent resistance; power delivery analysis; silicon correlation; Capacitance; Circuits; Curve fitting; Data mining; Impedance measurement; Packaging; Power measurement; Semiconductor device measurement; Semiconductor device noise; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Performance of Electronic Packaging and Systems, 2009. EPEPS '09. IEEE 18th Conference on
Conference_Location
Portland, OR
Print_ISBN
978-1-4244-4447-2
Electronic_ISBN
978-1-4244-5646-8
Type
conf
DOI
10.1109/EPEPS.2009.5338445
Filename
5338445
Link To Document