Title :
Reliability investigation of SiC bipolar device module in long time inverter operation
Author :
Tanaka, A. ; Ogata, S. ; Izumi, T. ; Nakayama, K. ; Hayashi, T. ; Miyanagi, Y. ; Asano, K.
Author_Institution :
Power Eng. R&D Center, Kansai Electr. Power Co., Inc., Amagasaki, Japan
Abstract :
The reliability of SiC bipolar device modules consisting of SiC commutated gate turn-off thyristors and SiC pin diodes fabricated on a 4° off-cut SiC substrate is investigated. According to three-phase inverter operation using a Back to Back system at DC bus voltage of 2 kV and effective output power of approximately 120 kW, the SiC module could achieve the world´s first successful inverter operation lasting more than 1000 hours, thereby verifying its reliability in long time inverter operation.
Keywords :
invertors; p-i-n diodes; semiconductor device models; semiconductor device reliability; thyristors; SiC; SiC bipolar device module; commutated gate turn-off thyristor; long time inverter operation; pin diodes; power 120 kW; reliability; three-phase inverter operation; voltage 2 kV; Current measurement; Inverters; Reliability; Silicon carbide; Substrates; Temperature measurement; Voltage measurement;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2012.6229066
