DocumentCode
2474028
Title
Effects of H/sub 2/ addition in magnetized inductively coupled C/sub 2/F/sub 6/ plasma etching of silica aerogel film
Author
Seok-Joo Wang ; Hyung-Ho Park ; Sang-Hoon Hyun ; Geun-Young Yeom
Author_Institution
Dept. of Ceramic Eng., Yonsei Univ., Seoul, South Korea
fYear
2000
fDate
11-13 July 2000
Firstpage
206
Lastpage
207
Abstract
Low-k dielectrics not only lower line-to-line capacitance, but also reduce cross-talk noise in the interconnect and alleviate power dissipation issues. Silica aerogel film is a promising candidate for low-k interlevel dielectrics by its ca. 70% porosity. As one of manufacture processes, etching behavior was considered with the increasing of H/sub 2/ gas addition to C/sub 2/F/sub 6/ gas.
Keywords
aerogels; dielectric thin films; silicon compounds; sputter etching; H/sub 2/ addition; SiO/sub 2/; hexafluoroethane; low-k interlevel dielectric; magnetized inductively coupled plasma etching; porosity; silica aerogel film; Couplings; Etching; Hydrogen; Integrated circuit noise; Plasma applications; Plasma materials processing; Power engineering and energy; Semiconductor films; Silicon compounds; Surface morphology;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-004-6
Type
conf
DOI
10.1109/IMNC.2000.872712
Filename
872712
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