DocumentCode
2474036
Title
Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200 °C
Author
Chu, Rongming ; Brown, David ; Zehnder, Daniel ; Chen, Xu ; Williams, Adam ; Li, Ray ; Chen, Mary ; Newell, Scott ; Boutros, Karim
Author_Institution
HRL Labs., LLC, Malibu, CA, USA
fYear
2012
fDate
3-7 June 2012
Firstpage
237
Lastpage
240
Abstract
We report a GaN-on-Si metal-insulator-semiconductor field-effect transistor (MISFET) with normally-off operation and 600-V blocking capability at 200 °C temperature. The temperature-dependences of threshold voltage, on-resistance, and leakage characteristics are discussed.
Keywords
MISFET; gallium compounds; GaN-Si; MISFET; blocking capability; metal-insulator-semiconductor field-effect transistor; temperature 200 degC; FETs; Gallium nitride; Logic gates; Temperature; Temperature measurement; Threshold voltage; GaN-on-Si; blocking voltage; field-effect transistor; high temperature; normally-off;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location
Bruges
ISSN
1943-653X
Print_ISBN
978-1-4577-1594-5
Electronic_ISBN
1943-653X
Type
conf
DOI
10.1109/ISPSD.2012.6229067
Filename
6229067
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