DocumentCode
2474056
Title
High efficiency 11 watt octave S/C-band PHEMT MMIC power amplifier
Author
Komiak, J.J. ; Wang, S.C. ; Rogers, T.J.
Author_Institution
Sanders Associates Inc., Nashua, NH, USA
Volume
3
fYear
1997
fDate
8-13 June 1997
Firstpage
1421
Abstract
Design and performance of 0.25 um double fully selective recess PHEMT power amplifiers that have established new benchmarks for octave band power and efficiency are reported. The amplifiers tested from two lots, ten wafers total, average 11 Watts at 42% PAE with 17 dB power gain from 3 to 6 GHz, with peak performance of 17 Watts at 54.5% PAE and yields of 49.9%.
Keywords
HEMT integrated circuits; MMIC power amplifiers; etching; integrated circuit yield; wideband amplifiers; 0.25 micron; 11 W; 17 W; 17 dB; 3 to 6 GHz; 42 percent; 54.5 percent; C-band; PAE; PHEMT MMIC power amplifier; S-band; double fully selective recess PHEMT; octave band efficiency; octave band power; power gain; yields; Broadband amplifiers; Costs; Etching; Gallium arsenide; High power amplifiers; Impedance; MMICs; PHEMTs; Power amplifiers; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location
Denver, CO, USA
ISSN
0149-645X
Print_ISBN
0-7803-3814-6
Type
conf
DOI
10.1109/MWSYM.1997.596596
Filename
596596
Link To Document