Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si structures

Author

Zhou, Chunhua ; Jiang, Qimeng ; Huang, Sen ; Chen, Kevin J.

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China

fYear

2012

fDate

3-7 June 2012

Firstpage

245

Lastpage

248

Abstract

In this paper, we studied the vertical leakage/breakdown mechanisms in AlGaN/GaN structures grown on low resistivity p-type (111) Si substrate by temperature-dependent current-voltage measurements. We suggested that the top-to-substrate vertical leakage/breakdown is dominated by the space-charge-limited current (SCLC) conduction mechanism involving both acceptor and donor traps in buffer/transition layer. Based on temperature-dependent transient backgating measurements, the acceptor level and donor level were determined to be at E_V+543 meV and E_C-616 meV, respectively.

Keywords

semiconductor devices; space charge; substrates; AlGaN-GaN; acceptor level; acceptor traps; buffer/transition layer; donor level; donor traps; silicon substrate; space charge limited current conduction mechanism; temperature-dependent current-voltage measurement; temperature-dependent transient backgating measurement; top-to-substrate vertical leakage/breakdown mechanism; Aluminum gallium nitride; Electric breakdown; Electron traps; Gallium nitride; Silicon; Substrates; Temperature measurement; AlGaN/GaN-on-Si structures; acceptor level; donor level; space-charge-limited current conduction; vertical leakage and breakdown;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on

Conference_Location

Bruges

ISSN

1943-653X

Print_ISBN

978-1-4577-1594-5

Electronic_ISBN

1943-653X

Type

conf

DOI

10.1109/ISPSD.2012.6229069

Filename

6229069