Title :
Novel control architecture for JPHEMT power amplifiers achieving high efficiency EDGE application
Author :
Albasha, L. ; Clifton, J.C. ; Lawrenson, A. ; Eaton, A.
Author_Institution :
Sony Semicond. & Electron. Solutions, Basingstoke, UK
Abstract :
A saturated PA architecture for achieving best-in-class EDGE performance whilst maintaining dual-mode compatibility with GSM is presented. This technique has been developed to utilise the specific advantages the E-Mode J-PHEMT process provides for these applications. This represents a credible solution to the demand of a highly efficient integrated dual-mode (EDGE/GSM) PA control architecture.
Keywords :
HEMT integrated circuits; UHF power amplifiers; adaptive control; cellular radio; data communication; packet radio networks; E-Mode J-PHEMT process; GSM; control architecture; dual-mode compatibility; high efficiency EDGE application; saturated PA architecture; Circuits; Equations; GSM; High power amplifiers; PHEMTs; Power control; Power measurement; Radio frequency; Radiofrequency amplifiers; Transmitters;
Conference_Titel :
Radio and Wireless Conference, 2004 IEEE
Print_ISBN :
0-7803-8451-2
DOI :
10.1109/RAWCON.2004.1389146
