A MMIC smart power amplifier with on-chip dynamic bias controller for WCDMA mobile communication

Author

Choi, Y.H. ; Kim, K.Y. ; Kim, J.H. ; Noh, Y.S. ; Park, C.S.

Author_Institution

Sch. of Eng., Inf. & Commun. Univ. (ICU), Daejeon, South Korea

fYear

2004

fDate

19-22 Sept. 2004

Firstpage

351

Lastpage

354

Abstract

This work presents an InGaP/GaAs HBT smart MMIC power amplifier provided with a new dynamic bias controller and dual power stages in parallel. The proposed dynamic bias circuit controls the quiescent current as a function of input power with perfect freedom, and is implemented for a WCDMA MMIC power amplifier together with the parallel power stages for both linearity and efficiency. Maximum output power, PAE, and gain are simulated to have 31.3 dBm, 40.8%, and 23.9 dB, respectively in WCDMA conditions. The smart power amplifier exhibits an improvement of average power usage efficiency by 220 % while keeping the WCDMA linearity.

Keywords

MMIC power amplifiers; controllers; gallium arsenide; heterojunction bipolar transistors; indium compounds; mobile radio; power integrated circuits; 23.9 dB; 40.8 percent; InGaP-GaAs; InGaP/GaAs HBT; MMIC amplifier; WCDMA; dual power stages; heterojunction bipolar transistor; mobile communication; monolithic microwave integrated circuit; on-chip dynamic bias controller; smart power amplifier; wideband code-division multiple access; Circuits; Communication system control; Gallium arsenide; Heterojunction bipolar transistors; Linearity; MMICs; Mobile communication; Multiaccess communication; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Conference, 2004 IEEE

Print_ISBN

0-7803-8451-2

Type

conf

DOI

10.1109/RAWCON.2004.1389148

Filename

1389148