DocumentCode
247432
Title
Gaussian pulse mixing by stacked semiconductor layers
Author
Shramkova, O.V. ; Schuchinsky, Alexander G.
Author_Institution
Sch. of Electron., Electr. Eng. & Comput. Sci., Queen´s Univ. Belfast, Belfast, UK
fYear
2014
fDate
6-11 July 2014
Firstpage
1554
Lastpage
1555
Abstract
The nonlinear scattering of two Gaussian pulses with different central frequencies incident at slant angles on the periodic stack of binary semiconductor layers has been modelled in the self-consistent problem formulation taking into account the dynamics of charges. The effects of the pump pulse length and central frequencies, and the stack physical and geometrical parameters on the properties of the emitted combinatorial frequency waveforms are analysed and discussed.
Keywords
Gaussian processes; electromagnetic pulse; electromagnetic wave scattering; semiconductor materials; Gaussian pulse mixing; binary semiconductor layers; central frequencies; emitted combinatorial frequency waveforms; geometrical parameters; nonlinear scattering; periodic stack; pump pulse length; self-consistent problem formulation; stack physical parameters; Dispersion; Educational institutions; Metamaterials; Periodic structures; Permittivity; Plasmas; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Antennas and Propagation Society International Symposium (APSURSI), 2014 IEEE
Conference_Location
Memphis, TN
ISSN
1522-3965
Print_ISBN
978-1-4799-3538-3
Type
conf
DOI
10.1109/APS.2014.6905103
Filename
6905103
Link To Document