DocumentCode :
247432
Title :
Gaussian pulse mixing by stacked semiconductor layers
Author :
Shramkova, O.V. ; Schuchinsky, Alexander G.
Author_Institution :
Sch. of Electron., Electr. Eng. & Comput. Sci., Queen´s Univ. Belfast, Belfast, UK
fYear :
2014
fDate :
6-11 July 2014
Firstpage :
1554
Lastpage :
1555
Abstract :
The nonlinear scattering of two Gaussian pulses with different central frequencies incident at slant angles on the periodic stack of binary semiconductor layers has been modelled in the self-consistent problem formulation taking into account the dynamics of charges. The effects of the pump pulse length and central frequencies, and the stack physical and geometrical parameters on the properties of the emitted combinatorial frequency waveforms are analysed and discussed.
Keywords :
Gaussian processes; electromagnetic pulse; electromagnetic wave scattering; semiconductor materials; Gaussian pulse mixing; binary semiconductor layers; central frequencies; emitted combinatorial frequency waveforms; geometrical parameters; nonlinear scattering; periodic stack; pump pulse length; self-consistent problem formulation; stack physical parameters; Dispersion; Educational institutions; Metamaterials; Periodic structures; Permittivity; Plasmas; Scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Antennas and Propagation Society International Symposium (APSURSI), 2014 IEEE
Conference_Location :
Memphis, TN
ISSN :
1522-3965
Print_ISBN :
978-1-4799-3538-3
Type :
conf
DOI :
10.1109/APS.2014.6905103
Filename :
6905103
Link To Document :
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