Experimental analysis of DC and noise parameter degradation in n-channel reduced surface field (RESURF) LDMOS transistors

Author

Mahmud, M. Iqbal ; Çelik-Butler, Zeynep ; Cheng, Xu ; Huang, Weixiao ; Hao, Pinghai ; Srinivasan, Purushothaman ; Hou, Frank ; Amey, Benjamin L. ; Pendharkar, Sameer

Author_Institution

Electr. Eng. Dept., Univ. of Texas at Arlington, Arlington, TX, USA

fYear

2012

fDate

3-7 June 2012

Firstpage

311

Lastpage

314

Abstract

1/f noise analysis is implemented as a quantitative measure for the dielectric/silicon interface related reliability and degradation in RESURF lateral double-diffused MOS transistors. The effect of DC stress on 1/f noise performance as well as on the location of stress induced degradation have been investigated with respect to stressing time in differently processed low and medium voltage LDMOS. The distribution of traps has been extracted spatially into the oxide and as a function of band-gap energy. The effect of LDMOS drift length to noise degradation has been studied.

Keywords

MOSFET; DC; LDMOS drift length; LDMOS transistors; RESURF lateral double-diffused MOS transistors; band-gap energy; dielectric/silicon interface related reliability; n-channel reduced surface field; noise analysis; noise parameter degradation; noise performance; stress induced degradation; stressing time; Degradation; Fluctuations; Logic gates; Noise; Semiconductor device measurement; Stress; Voltage measurement; 1/ƒ noise; RESURF LDMOS; degradation; drift region; extended drain; gate oxide-overlap; stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on

Conference_Location

Bruges

ISSN

1943-653X

Print_ISBN

978-1-4577-1594-5

Electronic_ISBN

1943-653X

Type

conf

DOI

10.1109/ISPSD.2012.6229085

Filename

6229085