Title :
Experimental analysis of DC and noise parameter degradation in n-channel reduced surface field (RESURF) LDMOS transistors
Author :
Mahmud, M. Iqbal ; Çelik-Butler, Zeynep ; Cheng, Xu ; Huang, Weixiao ; Hao, Pinghai ; Srinivasan, Purushothaman ; Hou, Frank ; Amey, Benjamin L. ; Pendharkar, Sameer
Author_Institution :
Electr. Eng. Dept., Univ. of Texas at Arlington, Arlington, TX, USA
Abstract :
1/f noise analysis is implemented as a quantitative measure for the dielectric/silicon interface related reliability and degradation in RESURF lateral double-diffused MOS transistors. The effect of DC stress on 1/f noise performance as well as on the location of stress induced degradation have been investigated with respect to stressing time in differently processed low and medium voltage LDMOS. The distribution of traps has been extracted spatially into the oxide and as a function of band-gap energy. The effect of LDMOS drift length to noise degradation has been studied.
Keywords :
MOSFET; DC; LDMOS drift length; LDMOS transistors; RESURF lateral double-diffused MOS transistors; band-gap energy; dielectric/silicon interface related reliability; n-channel reduced surface field; noise analysis; noise parameter degradation; noise performance; stress induced degradation; stressing time; Degradation; Fluctuations; Logic gates; Noise; Semiconductor device measurement; Stress; Voltage measurement; 1/ƒ noise; RESURF LDMOS; degradation; drift region; extended drain; gate oxide-overlap; stress;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2012.6229085
