Fabrication and characterization of periodic nano-faceting structures on patterned vicinal [110] GaAs substrates by MOVPE

Author

Harada, T. ; Oda, Y. ; Motohisa, J. ; Fukui, T.

Author_Institution

Res. Center for Interface Quantum Electron., Hokkaido Univ., Sapporo, Japan

fYear

2000

fDate

11-13 July 2000

Firstpage

246

Abstract

Recently, various semiconductor nanoscale structures such as quantum wire (QWR) and quantum dot (QD) structures using self-organizing formation method have been widely studied. This method has the advantage that these structures are formed only by crystal growth. Furthermore, the combination of the self-organizing formation and the pre-patterning on the substrate surface improves the size uniformity and the position control of quantum structures. In this paper, fabrication and characterization of periodic nano-faceting structures grown by metalorganic vapor phase epitaxy (MOVPE) on patterned vicinal substrates is presented.

Keywords

III-V semiconductors; gallium arsenide; nanostructured materials; self-assembly; semiconductor growth; semiconductor quantum dots; semiconductor quantum wires; vapour phase epitaxial growth; GaAs; crystal growth; metalorganic vapor phase epitaxy; patterned vicinal [110] GaAs substrate; periodic nanofaceting structure; quantum dot; quantum wire; self-organizing formation; semiconductor quantum structure; Atomic force microscopy; Epitaxial growth; Epitaxial layers; Fabrication; Gallium arsenide; Nanostructures; Periodic structures; Quantum dots; Scanning electron microscopy; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2000 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-004-6

Type

conf

DOI

10.1109/IMNC.2000.872737

Filename

872737