Scanning Capacitance Microscopy for measuring device carrier profiles beyond the 100 nm generation

Author

Kopanski, J.J. ; Marchiando, J.F. ; Rennex, B.G.

Author_Institution

Div. of Semicond. Electron., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

2000

fDate

11-13 July 2000

Firstpage

250

Lastpage

251

Abstract

Scanning Capacitance Microscopy (SCM) is a leading candidate for a metrology capable of measuring the two-dimensional (2-D) carrier profiles of cross-sectioned silicon transistors. Since 1992, there has been a program at the National Institute of Standards and Technology in the United States to develop the measurement techniques and theoretical modeling necessary to make SCM a practical metrology for quantitative measurement of 2-D carrier profiles. The SCM carrier profiling technique will be described in detail from sample preparation, to SCM image measurement, and to extraction of the final 2-D carrier profile.

Keywords

MOSFET; capacitance measurement; carrier density; scanning probe microscopy; semiconductor device measurement; 100 nm; Si; scanning capacitance microscopy; semiconductor device measurement; silicon transistor; two-dimensional carrier profile; Capacitance measurement; Length measurement; MOSFETs; Metrology; Microscopy; NIST; Silicon; Spatial resolution; Two dimensional displays; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2000 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-004-6

Type

conf

DOI

10.1109/IMNC.2000.872740

Filename

872740