A 6-18 GHz broadband high power MMIC for EW applications

Author

Barnes, A.R. ; Moore, M.T. ; Allenson, M.B.

Author_Institution

Defence Res. Agency, Malvern, UK

Volume

3

fYear

1997

fDate

8-13 June 1997

Firstpage

1429

Abstract

A three stage, 6-18 GHz, dual channel MMIC power amplifier has been designed and tested. The design has been fabricated using a 0.25 /spl mu/m T-gate, MBE grown GaAs-InGaAs-AlGaAs, power PHEMT process at Texas Instruments. The measured single channel small signal gain is 24.1/spl plusmn/3.4 dB over 6-18 GHz with an input return loss of >12 dB. The single channel output power at 2 dB gain compression, over 6-18 GHz is 3.4/spl plusmn/1.1 Watts pulsed and 2.4/spl plusmn/1.1 Watts CW. Using off chip combiners the dual channel amplifier gives 5.1/spl plusmn/1.3 Watts pulsed, 4.3/spl plusmn/1.3 Watts CW with a small signal gain of 24 dB/spl plusmn/3.5 dB over 6-18 GHz.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; electronic warfare; field effect MMIC; gallium arsenide; wideband amplifiers; 0.25 micron; 12 dB; 2.4 to 5.1 W; 24 dB; 6 to 18 GHz; EW application; GaAs-InGaAs-AlGaAs; T-gate MBE grown GaAs-InGaAs-AlGaAs power PHEMT; broadband three-stage dual-channel MMIC power amplifier; gain compression; input return loss; off chip combiner; output power; small signal gain; Broadband amplifiers; Gain measurement; Instruments; Loss measurement; MMICs; PHEMTs; Power amplifiers; Pulse amplifiers; Pulse compression methods; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.596598

Filename

596598