Title :
Inspection of critical dimension- and transmission uniformity of contact patterns by DUV imaging and regression algorithm
Author :
Yamashita, K. ; Yamaguchi, S.
Author_Institution :
Adv. LSI Technol. Lab., Toshiba R&D Center, Kawasaki, Japan
Abstract :
The SIA roadmap requires that mask CD uniformity be 16 nm for isolated lines, 24 nm for dense lines and contact patterns of 0.18 micron generation. The purpose of this paper is to give a CD and transmission inspection algorithm based on regression, applications to contact patterns and statistical analysis of experimental results.
Keywords :
inspection; statistical analysis; ultraviolet lithography; 0.18 micron; DUV lithography; contact pattern; critical dimension uniformity; inspection; regression algorithm; statistical analysis; transmission uniformity; Image sensors; Inspection; Isolation technology; Large scale integration; Linearity; Microelectronics; Pattern matching; Propagation losses; Research and development; Statistical analysis;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
DOI :
10.1109/IMNC.2000.872745
