Title :
Influence of dynamic switching on the robustness of power devices against cosmic radiation
Author :
Haertl, Andreas ; Soelkner, Gerald ; Pfirsch, Frank ; Brekel, Waleri ; Duetemeyer, Thomas
Author_Institution :
Infineon Technol. AG, Neubiberg, Germany
Abstract :
For the first time, experiments and simulations for testing the influence of dynamic switching on the robustness of power devices against cosmic radiation are presented. Irradiation experiments of switching high power modules are performed, using pulsed proton or neutron beams. Thereby, the switching frequency of the power modules is synchronized to the extraction frequency of particle beam pulses from the synchrotron. With this new experimental approach both 6.5kV IGBTs and free-wheeling diodes are studied under various switching conditions. Employing these experiments and also simulations based on semi-empirical models, we find a non-negligible contribution of these dynamic effects on the failure rate of high power devices induced by high-energy nucleon irradiation.
Keywords :
cosmic background radiation; insulated gate bipolar transistors; neutron beams; power semiconductor diodes; IGBT; cosmic radiation; dynamic switching; failure rate; free-wheeling diode; high-energy nucleon irradiation; neutron beam; particle beam pulse; power device; pulsed proton beam; voltage 6.5 kV; Electric fields; Insulated gate bipolar transistors; Multichip modules; Particle beams; Protons; Robustness; Switches; IGBT; cosmic radiation; power devices; robustness;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2012.6229094