• DocumentCode
    2474641
  • Title

    Recent activities in the development of EUV lithography at ASET

  • Author

    Okazaki, S.

  • Author_Institution
    EUVL Lab., Assoc. of Super-Adv. Electron. Technol., Kanagawa, Japan
  • fYear
    2000
  • fDate
    11-13 July 2000
  • Firstpage
    262
  • Lastpage
    263
  • Abstract
    EUV lithography is the most promising candidate for the fabrication of devices with feature sizes of 70 nm and below. Since October, 1998, ASET has been working on the development of the basic technologies of EUV lithography in cooperation with Prof. H.Kinoshita of the Himeji Institute of Technology. These technologies can be broken down into three categories: exposure system, multilayer mask, and resist process.
  • Keywords
    ultraviolet lithography; 70 nm; ASET; EUV lithography; exposure system; multilayer mask; resist process; Cleaning; Fabrication; Laboratories; Lithography; Metrology; Nonhomogeneous media; Optical imaging; Optical interferometry; Resists; Ultraviolet sources;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2000 International
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-004-6
  • Type

    conf

  • DOI
    10.1109/IMNC.2000.872749
  • Filename
    872749
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2474641