DocumentCode
2474660
Title
Optics for EUV lithography
Author
Kurz, P. ; Mann, H.-J. ; Antoni, M. ; Singer, W. ; Muhlbeyer, M. ; Melzer, F. ; Dinger, U. ; Weiser, M. ; Stacklies, S. ; Seitz, G. ; Haidl, F. ; Sohmen, E. ; Kaiser, W.
Author_Institution
Carl Zeiss, Oberkochen, Germany
fYear
2000
fDate
11-13 July 2000
Firstpage
264
Abstract
Extreme Ultraviolet Lithography (EUVL), using 13 nm radiation, has a high probability to become the Next Generation Lithography of choice for resolutions of 50 nm and below. The work at CARL ZEISS focusses on the development of optical system design and core technologies necessary for the industrialization of EUVL optical systems.
Keywords
ultraviolet lithography; 13 nm; Carl Zeiss; EUV lithography; next generation lithography; optical system; Coatings; Electronic mail; Lithography; Metrology; Mirrors; Optical design; Optical design techniques; Optical device fabrication; Ultraviolet sources;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-004-6
Type
conf
DOI
10.1109/IMNC.2000.872750
Filename
872750
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