Title :
Clamped inductive turn-off failure in high-voltage NPT-IGBTs under overloading conditions
Author :
Perpiñà, X. ; Cortés, I. ; Urresti-Ibañez, J. ; Jordà, X. ; Rebollo, J. ; Millán, J.
Author_Institution :
Inst. de Microelectron. de Barcelona IMB-CNM, Barcelona, Spain
Abstract :
The clamped inductive turn-off failure of NPT-IGBTs is investigated under overloading events. First, their signatures are determined. Second, physical TCAD simulations are carried out considering, for the first time, the current mismatch among the cells from the chip core, gate runner and edge termination areas. As a result, a secondary breakdown at the IGBT peripheral cells at the edge of the gate runner has been indentified to be responsible of the failure. Besides, a strategy to enhance the device robustness is proposed.
Keywords :
insulated gate bipolar transistors; semiconductor device breakdown; technology CAD (electronics); IGBT peripheral cell; chip core; clamped inductive turn-off failure; current mismatch; edge termination area; gate runner; high-voltage NPT-IGBT; overloading condition; physical TCAD simulation; secondary breakdown; Buffer layers; Computational modeling; Current density; Insulated gate bipolar transistors; Integrated circuit modeling; Logic gates;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2012.6229096
