Title :
The plasma treatment and dry etching characteristics of organic low-k dielectrics
Author :
Wei, T.C. ; Liu, C.H.
Author_Institution :
Dept. of Chem. Eng., Chung Yuan Univ., Chung Li, Taiwan
Abstract :
To achieve high speed and high performance, the feature size of future ULSI circuits must be continuing shrinking. RC delay becomes a major limitation for device performance. Various types of organic low-k polymers have been developed as promising candidates for next generation interconnection dielectrics. However, the electrical, chemical, mechanical, and thermal properties of these new materials are not fully satisfied, and the patterning of these materials was rarely discussed. In this study, we investigated the plasma treatment and dry etching characteristics of two organic low-k dielectrics, FLARE/sup TM/ 2.0 and fluorinated amorphous carbon (a-C:F).
Keywords :
dielectric thin films; organic compounds; plasma materials processing; sputter etching; C:F; FLARE 2.0; ULSI interconnection; dry etching; fluorinated amorphous carbon; intermetal dielectric; organic low-k dielectric; plasma treatment; Chemicals; Delay; Dielectric materials; Dry etching; Integrated circuit interconnections; Plasma applications; Plasma devices; Plasma properties; Polymers; Ultra large scale integration;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
DOI :
10.1109/IMNC.2000.872757