DocumentCode
2474789
Title
Control of crystalline structure and ferroelectric properties of Pb(ZrxTi/sub 1-X/)O3 films by pulsed laser deposition
Author
Fujita, Hirotake ; Goto, Satoru ; Agata, Shinichi ; Sakashita, Mitsuo ; Sakai, Akira ; Zaima, Shigeaki ; Yasuda, Yukio
Author_Institution
Dept. of Crystalline Mater. Sci., Nagoya Univ., Japan
fYear
2000
fDate
11-13 July 2000
Firstpage
276
Lastpage
277
Abstract
We have investigated Pb(Zr/sub X/Ti/sub 1-X/)O/sub 3/ (PZT) films on Pt/SiO/sub 2//Si substrates formed by pulsed laser deposition (PLD) and subsequent rapid thermal annealing (RTA) under various growth conditions. X-ray diffraction analysis revealed that preferentially [100]-oriented perovskite PZT films with trigonal structure were formed after RTA from as-deposited films which had consisted of small grains with pyroclore structure. The degree of [100]-orientation of the PZT film increased with the oxygen partial pressure during PLD. The capacitors made from these films showed higher remnant polarization than those from randomly oriented films.
Keywords
X-ray diffraction; ferroelectric capacitors; ferroelectric thin films; lead compounds; pulsed laser deposition; rapid thermal annealing; PZT; PZT thin film; PbZrO3TiO3; Pt/SiO/sub 2//Si substrate; X-ray diffraction; capacitor; crystalline structure; ferroelectric properties; growth; preferential orientation; pulsed laser deposition; pyroclore phase; rapid thermal annealing; remnant polarization; trigonal perovskite phase; Crystallization; Ferroelectric films; Ferroelectric materials; Optical pulses; Pulsed laser deposition; Rapid thermal annealing; Semiconductor films; Substrates; X-ray diffraction; X-ray lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-004-6
Type
conf
DOI
10.1109/IMNC.2000.872761
Filename
872761
Link To Document