DocumentCode
2474862
Title
Parametric counterfeit IC detection via Support Vector Machines
Author
Huang, Ke ; Carulli, John M., Jr. ; Makris, Yiorgos
Author_Institution
Dept. of Electr. Eng., Univ. of Texas at Dallas, Richardson, TX, USA
fYear
2012
fDate
3-5 Oct. 2012
Firstpage
7
Lastpage
12
Abstract
We present a method to detect a common type of counterfeit Integrated Circuits (ICs), namely used ones, from their brand new counterparts using Support Vector Machines (SVMs). In particular, we demonstrate that we can train a one-class SVM classifier using only a distribution of process variation-affected brand new devices, but without prior information regarding the impact of transistor aging on the IC behavior, to accurately distinguish between these two classes based on simple parametric measurements. We demonstrate effectiveness of the proposed method using a set of actual fabricated devices which have been subjected to burn-in test, in order to mimic the impact of aging degradation over time, and we discuss the limitations and the potential extensions of this approach.
Keywords
ageing; circuit analysis computing; integrated circuit measurement; integrated circuit testing; support vector machines; transistors; IC behavior; SVM; aging degradation; counterfeit integrated circuits; fabricated devices; one-class SVM classifier; parametric burn-in test analysis; parametric counterfeit IC detection; parametric measurements; support vector machines; transistor aging; Aging; Degradation; Integrated circuits; Kernel; Logic gates; Reliability; Support vector machines; Counterfeit IC detection; one-class SVM classifier; parametric burn-in test;
fLanguage
English
Publisher
ieee
Conference_Titel
Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2012 IEEE International Symposium on
Conference_Location
Austin, TX
Print_ISBN
978-1-4673-3043-5
Type
conf
DOI
10.1109/DFT.2012.6378191
Filename
6378191
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