Contrast measurement of reflection mask with Cr and Ta absorber for Extreme Ultraviolet Lithography

Author

Niibe, Masaliito ; Watanabe, Takeo ; Nii, Hajime ; Tanaka, Takeshi ; Kinoshita, Hiroo

Author_Institution

Lab. of Adv. Sci. & Technol. for Ind., Himeji Inst. of Technol., Hyogo, Japan

fYear

2000

fDate

11-13 July 2000

Firstpage

288

Lastpage

289

Abstract

We chose chromium, Cr, and tantalum, Ta, metals as a new absorbing material for extreme ultraviolet lithography (EUVL) reflection mask. These metals are frequently used in photomask or X-ray mask for lithography and their fabrication processes are well investigated. This paper shows the calculated transmittance of EUV light for various metals at the wavelength of 13.5 nm. Thee transmittance (or absorbing ability) of Cr and Ta metals for the EUV light is nearly equal to that of tungsten, W. We have fabricated the reflection masks with Cr or Ta metal absorbers deposited on top of Mo/Si multilayer reflectors.

Keywords

chromium; masks; tantalum; ultraviolet lithography; 13.5 nm; Cr; EUV transmittance; Mo/Si multilayer reflector; Ta; contrast; extreme ultraviolet lithography; metal absorber; reflection mask; Chromium; Etching; Fabrication; Inorganic materials; Lithography; Nonhomogeneous media; Optical films; Optical reflection; Reflectivity; Ultraviolet sources;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2000 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-004-6

Type

conf

DOI

10.1109/IMNC.2000.872767

Filename

872767