Title :
Chemically amplified electron beam positive resist with acetal protecting group-effect of the additives on resist properties
Author :
Saito, Satoshi ; Kihara, Naoko ; Ushirogouchi, Tohru
Author_Institution :
Corp. Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
We discuss a high-sensitivity electron beam (EB) positive resist based on acetal-protected poly(hydroxystyrene) (PHS) and also propose a new chemical amplification system. In this system, the generated acid after EB exposure acts as the catalyst for the deprotection reaction, as well as the water-generating reaction. This system can make the combination of acetal protecting group and strong acid possible in EB lithography.
Keywords :
electron resists; polymer films; PHS; acetal protecting group; additive; catalyst; chemically amplified positive resist; deprotection reaction; electron beam lithography; photoacid generator; poly(hydroxystyrene); water generating reaction; Additives; Chemical compounds; Chemical technology; Electron beams; Lithography; Optical device fabrication; Polymers; Protection; Research and development; Resists;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
DOI :
10.1109/IMNC.2000.872768
