Through silicon via (TSV) equalizer

Author

Kim, Joohee ; Song, Eakhwan ; Cho, Jeonghyeon ; Jim So Pak ; Lee, Junho ; Lee, Hyungdong ; Park, Kunwoo ; Kim, Joungho

Author_Institution

Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

fYear

2009

fDate

19-21 Oct. 2009

Firstpage

13

Lastpage

16

Abstract

Through silicon via (TSV) is a promising vertical interconnection method to achieve a 3-dimensional integrated circuit (3D IC) system. However, high-speed digital signals suffer from severe distortions induced by TSV interconnects. In this paper, we propose a TSV equalizer using an ohmic contact on a double-sided silicon interposer to reduce the inter-symbol interference (ISI) of the TSV interconnects in a 3D IC system.

Keywords

elemental semiconductors; equalisers; high-speed integrated circuits; integrated circuit interconnections; ohmic contacts; silicon; 3-dimensional integrated circuit system; TSV interconnects; double-sided silicon interposer; high-speed digital signal distortion; inter-symbol interference reduction; through-silicon via equalizer; vertical interconnection method; Attenuation; Contact resistance; Equalizers; Integrated circuit interconnections; Integrated circuit technology; Intersymbol interference; Ohmic contacts; Silicon; Three-dimensional integrated circuits; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Performance of Electronic Packaging and Systems, 2009. EPEPS '09. IEEE 18th Conference on

Conference_Location

Portland, OR

Print_ISBN

978-1-4244-4447-2

Electronic_ISBN

978-1-4244-5646-8

Type

conf

DOI

10.1109/EPEPS.2009.5338488

Filename

5338488