DocumentCode
2474996
Title
Spin polarized semiconductor lasers
Author
Bhattacharya, Pallab ; Basu, D.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
fYear
2010
fDate
6-9 Sept. 2010
Firstpage
105
Lastpage
106
Abstract
We have derived analytical expressions for threshold current reduction, output polarization, the gain anisotropy parameter and the spin laser frequency response taking into account the diffusion of spin polarized carriers from the ferromagnetic contact to the active region and spin-coupled laser rate equations. The validity of the derivations is endorsed by excellent agreement of these parameters from measurements done on spin-VCSELs.
Keywords
frequency response; semiconductor lasers; spin polarised transport; surface emitting lasers; ferromagnetic contact; gain anisotropy parameter; spin laser frequency response; spin polarized semiconductor lasers; spin-VCSEL; spin-coupled laser rate equations; threshold current reduction; Laser modes; Modulation; Quantum dot lasers; Threshold current; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
Conference_Location
Atlanta, GA
ISSN
2158-3234
Print_ISBN
978-1-4244-7016-7
Electronic_ISBN
2158-3234
Type
conf
DOI
10.1109/NUSOD.2010.5595643
Filename
5595643
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