Linearity analysis of SiGe HBT amplifiers using a power-dependent coefficient Volterra technique

Author

Deng, Junxiong ; Gudem, Prasad S. ; Larson, Lawrence E.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, La Jolla, CA, USA

fYear

2004

fDate

19-22 Sept. 2004

Firstpage

479

Lastpage

482

Abstract

To design high efficiency linear power amplifiers, it is always desired to clarify the main nonlinearity contributors in power amplifiers. The linearity of a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) power amplifier is analyzed with the help of a power-dependent coefficient Volterra technique. The effect of emitter inductance is included and the dominant sources of nonlinearity are identified.

Keywords

3G mobile communication; Ge-Si alloys; Volterra series; bipolar integrated circuits; heterojunction bipolar transistors; inductance; power amplifiers; HBT amplifiers; Si-Ge; SiGe; emitter inductance; heterojunction bipolar transistor; high efficiency linear power amplifiers; linearity analysis; nonlinearity; power-dependent coefficient Volterra technique; silicon germanium HBT; third-generation wireless communication; Broadband amplifiers; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Inductance; Intermodulation distortion; Linearity; Power amplifiers; Radiofrequency amplifiers; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Conference, 2004 IEEE

Print_ISBN

0-7803-8451-2

Type

conf

DOI

10.1109/RAWCON.2004.1389181

Filename

1389181