Influence of polar face on optical properties of staggered 440 nm InGaN/InGaN/GaN quantum-well light-emitting diodes

Author

Park, S.-H. ; Kim, B.H. ; Ahn, D. ; Lee, Y.T.

Author_Institution

Dept. of Electron. Eng., Catholic Univ. of Daegu, Hayang, South Korea

fYear

2010

fDate

6-9 Sept. 2010

Firstpage

93

Lastpage

94

Abstract

The influence of the polar plane on optical properties of staggered InGaN/InGaN/GaN quantum well (QW) light-emitting diodes was investigated using the multiband effective mass theory. The N-face staggered InGaN/InGaN/GaN QW structure has a greater spontaneous emission peak than the Ga-face staggered InGaN/InGaN/GaN QW structure because the before has a larger matrix element than the latter. On the other hand, the heavy-hole effective mass around the topmost valence band is not affected nearly by the polarity. We expect that the N-face staggered InGaN/InGaN/GaN QW structure has an improved characteristics compared to the Ga-face staggered InGaN/InGaN/GaN QW structure.

Keywords

III-V semiconductors; effective mass; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; light emitting diodes; nanophotonics; quantum well devices; semiconductor quantum wells; spontaneous emission; valence bands; wide band gap semiconductors; InGaN-InGaN-GaN; N-face staggered quantum well structure; heavy-hole effective mass; multiband effective mass theory; optical properties; quantum-well light-emitting diodes; size 440 nm; spontaneous emission; valence band; Biomedical optical imaging; Face; Gallium nitride; Optical diffraction; Optical polarization; Spontaneous emission; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on

Conference_Location

Atlanta, GA

ISSN

2158-3234

Print_ISBN

978-1-4244-7016-7

Electronic_ISBN

2158-3234

Type

conf

DOI

10.1109/NUSOD.2010.5595649

Filename

5595649