Electron leakage effects on the efficiency droop in GaN-based light-emitting diodes

Author

Piprek, Joachim ; Li, Zhan-Ming

Author_Institution

NUSOD Inst. LLC, Newark, DE, USA

fYear

2010

fDate

6-9 Sept. 2010

Firstpage

89

Lastpage

90

Abstract

Nitride-based light-emitting diodes suffer from a reduction (droop) of the internal quantum efficiency (IQE) with increasing injection current. Using advanced device simulation, we investigate the impact of electron leakage on the IQE droop for different properties of the electron blocker layer. We also find that the electron leakage decreases with increasing temperature, which contradicts common assumptions.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; leakage currents; light emitting diodes; magnesium; quantum well devices; silicon; wide band gap semiconductors; In_0.15Ga_0.85N-GaN:Si-Al_0.15Ga_0.85N-GaN:Mg; advanced device simulation; electron blocker layer; electron leakage effects; injection current; internal quantum efficiency; light-emitting diodes; Charge carrier processes; Gallium nitride; Light emitting diodes; Mathematical model; Quantum well devices; Radiative recombination;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on

Conference_Location

Atlanta, GA

ISSN

2158-3234

Print_ISBN

978-1-4244-7016-7

Electronic_ISBN

2158-3234

Type

conf

DOI

10.1109/NUSOD.2010.5595651

Filename

5595651