DocumentCode :
2475302
Title :
Study on IMD3 in power combining system
Author :
Xie, Ting-xian ; Chen, Yan ; Zhou, Jie
Author_Institution :
Electron. Eng. Res. Inst., China Acad. of Eng. Phys., Mianyang, China
fYear :
2010
fDate :
17-19 Dec. 2010
Firstpage :
417
Lastpage :
420
Abstract :
The paper analyses the IMD3 in power combining system. The relation between isolation of power splitter and IMD3 of system is revealed. Then, the simulation is operated in ADS with GaN FET CGH21240 of Cree Co., Ltd. According to the theory and simulation, the power of output would be higher and IMD3 of the system would be deteriorating, with the isolation of power splitter deteriorating. To approve the imagine, an experiment is implemented using a tee-joint with isolation of 3dB and a power splitter with isolation of 26dB to measure the IMD3 of system without changing the other environment of measurement. The result shows that the IMD3 of the system with the power splitter is more excellent than the tee-joint, and the ratio of the delta power of output and delta IMD3 is nearly 2:1.
Keywords :
field effect transistors; gallium compounds; power combiners; ADS; Cree Co Ltd; FET CGH21240; GaN; IMD3; power combining system; power splitter deteriorating; tee-joint; FETs; Integrated circuit modeling; OFDM; Power amplifiers; Power generation; Power measurement; Transfer functions; IMD3; combining; isolation; power splitter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Apperceiving Computing and Intelligence Analysis (ICACIA), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-8025-8
Type :
conf
DOI :
10.1109/ICACIA.2010.5709932
Filename :
5709932
Link To Document :
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