• DocumentCode
    2475307
  • Title

    Modeling of polarization effects in InGaN PIN solar cells

  • Author

    Lestrade, M. ; Li, Z.Q. ; Xiao, Y.G. ; Li, Z. M Simon

  • Author_Institution
    Crosslight Software, Burnaby, BC, Canada
  • fYear
    2010
  • fDate
    6-9 Sept. 2010
  • Firstpage
    77
  • Lastpage
    78
  • Abstract
    In this paper, we study the effect of polarization on the performance of InGaN solar cells. By using the APSYS software, we show that device performance is adversely affected due to the interface charges near GaN contact layers and that alternate means of creating ohmic contacts should be considered.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; polarisation; solar cells; APSYS software; InGaN; PIN solar cells; contact layers; ohmic contacts; polarization effects; Gallium nitride; Materials; Ohmic contacts; Performance evaluation; Photonic band gap; Photovoltaic cells; Software;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
  • Conference_Location
    Atlanta, GA
  • ISSN
    2158-3234
  • Print_ISBN
    978-1-4244-7016-7
  • Electronic_ISBN
    2158-3234
  • Type

    conf

  • DOI
    10.1109/NUSOD.2010.5595657
  • Filename
    5595657
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2475307