Design and fabrication of monolithic integrated optical array sensor and characterization of its single chip

Author

Kim, Si Jong ; Song, Hong Joo ; Lee, Jun Ho ; Roh, Cheong Hyun ; Choi, Hong Goo ; Hahn, Cheol Koo ; Kim, Tae Geun

Author_Institution

R&BD center for NANO Compound Semicond. Devices, Korea Electron. Technol. Inst., Seongnam, South Korea

fYear

2009

fDate

17-20 Aug. 2009

Firstpage

109

Lastpage

110

Abstract

Monolithic integrated optical array sensor is designed and fabricated. This array sensor is composed of vertical-cavity surface-emitting laser (VCSEL) and resonant cavity enhanced (RCE) photodiode. After the single chip is packaged, VCSEL and RCE photodiode are characterized independently. The VCSEL´s optical power of 0.3 mW is achieved at 30 mA with peak wavelength of 781 nm. The full width at half-maximum (FWHM) of 1 nm is achieved at 30 mA. The RCE photodiode´s responsivity of 0.92A/W is achieved at 780 nm.

Keywords

integrated optics; laser cavity resonators; optical design techniques; optical fabrication; optical sensors; photodiodes; semiconductor laser arrays; surface emitting lasers; RCE; VCSEL; current 30 mA; monolithic integrated optical array sensor fabrication; optical array sensor design; power 0.3 mW; resonant cavity enhanced photodiode; single chip characterization; vertical-cavity surface-emitting laser; wavelength 780 nm; wavelength 781 nm; Integrated optics; Optical arrays; Optical design; Optical device fabrication; Optical sensors; Optical surface waves; Photodiodes; Sensor arrays; Sensor phenomena and characterization; Vertical cavity surface emitting lasers; Fluorescence detection; Monolithic integrated optical sensor; optical array sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical MEMS and Nanophotonics, 2009 IEEE/LEOS International Conference on

Conference_Location

Clearwater, FL

Print_ISBN

978-1-4244-2382-8

Electronic_ISBN

978-1-4244-2382-8

Type

conf

DOI

10.1109/OMEMS.2009.5338535

Filename

5338535