Self-consistent modeling of a transistor vertical-cavity surface-emitting laser

Author

Shi, Wei ; Faraji, Behnam ; Greenberg, Mark ; Berggren, Jesper ; Xiang, Yu ; Hammar, Mattias ; Chrostowski, Lukas

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of British Columbia, Vancouver, BC, Canada

fYear

2010

fDate

6-9 Sept. 2010

Firstpage

45

Lastpage

46

Abstract

A multiple quantum well (MQW) transistor vertical-cavity surface-emitting laser (T-VCSEL) is designed and numerically modeled. The quantum capture/escape process is simulated using a quantum-trap model. Both the steady state and frequency response of the T-VCSEL are calculated by a numerical and analytical approach.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optics; integrated optoelectronics; laser cavity resonators; laser frequency stability; optical design techniques; quantum optics; quantum well lasers; radiation pressure; surface emitting lasers; transistors; In_0.49Ga_0.51P-GaAs; frequency response; integrated heterojunction bipolar transistor; multiple quantum well transistor laser; optical design; optoelectronic properties; quantum capture process; quantum escape process; quantum-trap model; self-consistent modeling; transistor vertical-cavity surface-emitting laser; Integrated optics; Laser modes; Optical sensors; Semiconductor process modeling; Transistors; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on

Conference_Location

Atlanta, GA

ISSN

2158-3234

Print_ISBN

978-1-4244-7016-7

Electronic_ISBN

2158-3234

Type

conf

DOI

10.1109/NUSOD.2010.5595673

Filename

5595673