DocumentCode :
2475930
Title :
Numerical simulation of ZnO-based LEDs
Author :
Chiaria, S. ; Penna, M. ; Goano, M. ; Bellotti, E.
Author_Institution :
ECE Dept., Boston Univ., Boston, MA, USA
fYear :
2010
fDate :
6-9 Sept. 2010
Firstpage :
29
Lastpage :
30
Abstract :
Optimizing the internal quantum efficiency (IQE) is very important for UV LEDs, since the present generation of devices has very low IQE. This is particularly important for ZnO-based LEDs that are still technologically immature. This work presents the preliminary results of an ongoing investigation intended to identify the optimization criteria for the design of ZnO-based LEDs.
Keywords :
II-VI semiconductors; light emitting diodes; zinc compounds; UV LED; ZnO; internal quantum efficiency; numerical simulation; Aluminum gallium nitride; Charge carrier processes; Doping; Gallium nitride; Light emitting diodes; Mathematical model; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
Conference_Location :
Atlanta, GA
ISSN :
2158-3234
Print_ISBN :
978-1-4244-7016-7
Electronic_ISBN :
2158-3234
Type :
conf
DOI :
10.1109/NUSOD.2010.5595681
Filename :
5595681
Link To Document :
بازگشت