Modeling of vertical external cavity semiconductor laser with MQW resonant structure

Author

Napartovich, A.P. ; Elkin, N.N. ; Vysotsky, D.V.

Author_Institution

SRC RF Troitsk Inst. for Innovation & Thermonucl. Res., Troitsk, Russia

fYear

2010

fDate

6-9 Sept. 2010

Firstpage

9

Lastpage

10

Abstract

Numerical model is developed of a VECSEL with a resonant gain structure pumped by a fast electron beam. Optical modes properties for resonator formed by Bragg reflector, chip boundary and external mirror were studied. For above threshold operation carrier density in each of QWs obeys non-linear diffusion equation. A new iteration procedure for round-trip operator evaluation was developed, which provides linear growth of computation time with a size of MQW.

Keywords

carrier density; electron beams; laser cavity resonators; laser modes; mirrors; optical pumping; quantum well lasers; surface emitting lasers; Bragg reflector; MQW resonant structure; chip boundary; fast electron beam; linear growth; mirror; nonlinear diffusion equation; numerical model; optical mode properties; resonant gain structure; round-trip operator evaluation; threshold operation carrier density; vertical external cavity semiconductor laser; Laser beams; Laser modes; Mirrors; Nonlinear optics; Optical pumping; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on

Conference_Location

Atlanta, GA

ISSN

2158-3234

Print_ISBN

978-1-4244-7016-7

Electronic_ISBN

2158-3234

Type

conf

DOI

10.1109/NUSOD.2010.5595691

Filename

5595691