Title :
High-speed nanoscale metal-semiconductor-metal photodetectors with terahertz bandwidth
Author :
Marks, Zefram ; Van Zeghbroeck, Bart
Author_Institution :
Univ. of Colorado at Boulder, Boulder, CO, USA
Abstract :
A model for the maximum bandwidth achievable in metal-semiconductor-metal photodetectors is developed and simulated to determine the dimensions required for terahertz bandwidth. The bandwidth is found to exceed 1THz for devices with line pitch less than 100 nm.
Keywords :
high-speed optical techniques; metal-semiconductor-metal structures; microwave photonics; nanophotonics; photodetectors; semiconductor device models; high-speed nanoscale photodetectors; line pitch; metal-semiconductor-metal photodetectors; terahertz bandwidth; Bandwidth; Capacitance; Detectors; Integrated circuit modeling; Nanoscale devices; Photoconductivity; Photodetectors;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-7016-7
Electronic_ISBN :
2158-3234
DOI :
10.1109/NUSOD.2010.5595692
