DocumentCode
2476050
Title
High-speed nanoscale metal-semiconductor-metal photodetectors with terahertz bandwidth
Author
Marks, Zefram ; Van Zeghbroeck, Bart
Author_Institution
Univ. of Colorado at Boulder, Boulder, CO, USA
fYear
2010
fDate
6-9 Sept. 2010
Firstpage
11
Lastpage
12
Abstract
A model for the maximum bandwidth achievable in metal-semiconductor-metal photodetectors is developed and simulated to determine the dimensions required for terahertz bandwidth. The bandwidth is found to exceed 1THz for devices with line pitch less than 100 nm.
Keywords
high-speed optical techniques; metal-semiconductor-metal structures; microwave photonics; nanophotonics; photodetectors; semiconductor device models; high-speed nanoscale photodetectors; line pitch; metal-semiconductor-metal photodetectors; terahertz bandwidth; Bandwidth; Capacitance; Detectors; Integrated circuit modeling; Nanoscale devices; Photoconductivity; Photodetectors;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
Conference_Location
Atlanta, GA
ISSN
2158-3234
Print_ISBN
978-1-4244-7016-7
Electronic_ISBN
2158-3234
Type
conf
DOI
10.1109/NUSOD.2010.5595692
Filename
5595692
Link To Document