Quantum dot photodiodes fabricated by electrostatic layer-by-layer self-assembly

Author

Tu, Chang-Ching ; Lin, Lih Y.

Author_Institution

Dept. of Electr. Eng., Univ. of Washington, Seattle, WA, USA

fYear

2009

fDate

17-20 Aug. 2009

Firstpage

89

Lastpage

90

Abstract

In this paper we demonstrate photodiodes based on Schottky junction between multilayers of CdTe quantum dots (QDs) and thermally evaporated Au thin film. The CdTe QDs are synthesized and dispersed in aqueous solution with either positively (amino group) or negatively (carboxylate group) charged capping ligands. By electrostatic attraction, the QDs are self-assembled layer-by-layer on a silane functionalized substrate. By changing the number of layers, the thickness of the QD thin film can be well controlled. For the photodiode with 180 nm-thick CdTe QD thin film, external quantum efficiency = 1.38% can be achieved under 405 nm laser illumination and applied voltage = 10 V.

Keywords

II-VI semiconductors; Schottky barriers; cadmium compounds; electrostatics; gold; metallic thin films; multilayers; nanotechnology; photodiodes; self-assembly; semiconductor thin films; CdTe-Au; Schottky junction; amino group; carboxylate group; electrostatic attraction; electrostatic layer-by-layer self-assembly; external quantum efficiency; multilayers; negatively charged capping ligands; photodiodes; positively charged capping ligands; quantum dots; size 180 nm; thin film; voltage 10 V; wavelength 405 nm; Electrostatics; Gold; Nonhomogeneous media; Photodiodes; Quantum dots; Quantum well lasers; Self-assembly; Substrates; Thickness control; Transistors; Schottky junction; layer-by-layer self-assembly; photodiodes; quantum dots;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical MEMS and Nanophotonics, 2009 IEEE/LEOS International Conference on

Conference_Location

Clearwater, FL

Print_ISBN

978-1-4244-2382-8

Electronic_ISBN

978-1-4244-2382-8

Type

conf

DOI

10.1109/OMEMS.2009.5338581

Filename

5338581