Study on the thermal characteristics of GaN-based laser diodes

Author

Choi, Jong Hwa ; Shin, Moo Whan

Author_Institution

Dept. of Mater. Sci. & Eng., Myong Ji Univ., Yongin, South Korea

fYear

2010

fDate

6-9 Sept. 2010

Firstpage

5

Lastpage

6

Abstract

In this work, we have analyzed the thermal properties of a GaN-based LD (laser diode) as functions of input powers, cooling conditions, and ambient temperatures. It was found that the thermal resistance has a slight change with input current under the forced cooling condition. In contrast to the forced cooling condition, significant change of thermal resistance was observed under the natural cooling condition. When the ambient temperature was increased from 0°C to 50°C, the measured thermal resistance was increased from 20 K/W to 27.5 K/W.

Keywords

III-V semiconductors; cooling; gallium compounds; semiconductor lasers; thermal resistance; wide band gap semiconductors; GaN; ambient temperatures; cooling conditions; input powers; laser diodes; temperature 0 degC to 50 degC; thermal characteristics; thermal resistance; Cooling; Electronic packaging thermal management; Junctions; Materials; Temperature measurement; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on

Conference_Location

Atlanta, GA

ISSN

2158-3234

Print_ISBN

978-1-4244-7016-7

Electronic_ISBN

2158-3234

Type

conf

DOI

10.1109/NUSOD.2010.5595693

Filename

5595693