P1G-3 Highly (110)-Oriented Potassium Niobate Thin Films Prepared by RF-Magnetron Sputtering

Epitaxial (110)-oriented KNbO₃ thin films were deposited on a (100) MgO substrate by RF-magnetron sputtering. To clarify the sputtering conditions necessary for obtaining a highly oriented KNbO₃ thin film, the relationships among the degree of orientation, the composition ratio of K/Nb, and the lattice plane spacing were evaluated for KNbO₃ thin films sputtered using several types of targets. In the deposition method using dual targets of KNbO₃ and K₂CO₃, a higher orientation and a larger K/Nb ratio were incompatible. In single-target sputtering with a mixture target of KNbO₃:K₂CO₃, as the substrate temperature was decreased, although the K/Nb ratio increased and the (220)- plane spacing approached that of orthorhombic bulk KNbO₃, the orientation deteriorated. Using a single K-rich target, K₅NbO₃, containing no CO₂, a highly (110)-oriented KNbO₃ thin film with a K/Nb ratio of 0.40 and a (220)-plane spacing close to that of orthorhombic bulk KNbO₃ was obtained by increasing the RF power applied to the O₂ -radical source. Moreover, the displacement current in the KNbO₃ thin film was observed when an electric field was applied to the interdigital transducer formed on the thin film. It is considered that this indicates the existence of spontaneous polarization in the KNbO₃ thin film.