Title :
Transmission line model of the distributed heterojunction bipolar transistor
Author_Institution :
Wright Lab., Wright-Patterson AFB, OH, USA
Abstract :
The distributed nature of heterojunction bipolar transistor was modeled using the transmission line method. Admittances due to the bipolar junction, base metal Schottky contact, base and emitter contact resistances, were taken into account. Coupled differential equations describing the distributed nature of the junction potentials were derived. A numerical scheme was developed to solve the equations, and microwave parameters were calculated. The model can be applied to design HBT layouts for high microwave performance.
Keywords :
Schottky barriers; contact resistance; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device models; HBT layouts; base metal Schottky contact; bipolar junction; contact resistances; coupled differential equations; distributed heterojunction bipolar transistor; junction potentials; microwave parameters; transmission line model; Capacitance; Differential equations; Electromagnetic heating; Heterojunction bipolar transistors; Laplace equations; Microwave devices; Power transmission lines; Resistors; Thermal resistance; Transmission lines;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.596608
