DocumentCode :
2476942
Title :
A compact 30 GHz MMIC high power amplifier (3 W CW) in chip and packaged form
Author :
Kong, K.K.-S. ; Boone, D. ; King, M. ; Nguyen, B. ; Vernon, M. ; Reese, E. ; Brehm, G.
Author_Institution :
TriQuint Semicond. Texas, Richardson, TX, USA
fYear :
2002
fDate :
20-23 Oct. 2002
Firstpage :
37
Lastpage :
39
Abstract :
This paper presents performance of a compact 3 W HPA (High Power Amplifier) in MMIC and packaged form at 30 GHz. A low cost high power packaged part was achieved by designing a compact MMIC and adopting a laminate substrate approach for a package. TriQuint standard 0.25 /spl mu/m PHEMT production process on 50 /spl mu/m substrate technology was used for a compact MMIC PA design. The output power at P1 dB (CW measurement) of MMIC and packaged parts are 34.9 dBm and 34.5 dBm with associated gain of 21.5 dB. These results are the highest CW-power and gain reported for a single MMIC and packaged part at Ka-band.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; field effect MMIC; integrated circuit packaging; substrates; 0.25 micron; 21.5 dB; 3 W; 30 GHz; 50 micron; Ka-band; MMIC high power amplifier; TriQuint PHEMT production process; chip form; compact HPA; laminate substrate technology; low cost high power package; packaged form; Costs; Gain measurement; High power amplifiers; Laminates; MMICs; PHEMTs; Packaging; Power generation; Power measurement; Production;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
ISSN :
1064-7775
Print_ISBN :
0-7803-7447-9
Type :
conf
DOI :
10.1109/GAAS.2002.1049024
Filename :
1049024
Link To Document :
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