1 watt broad Ka-band ultra small high power amplifier MMICs using 0.25-/spl mu/m GaAs PHEMTs

Author

Bessemoulin, A. ; Dishong, J. ; Clark, G. ; White, D. ; Quentin, P. ; Thomas, H. ; Geiger, D.

Author_Institution

United Monolithic Semicond., Orsay, France

fYear

2002

fDate

20-23 Oct. 2002

Firstpage

40

Lastpage

43

Abstract

We report the design and performance of ultra compact high power amplifier MMICs for Ka-band applications. Using a production 4-inch 0.25-/spl mu/m GaAs PHEMT technology, in combination with appropriate compact circuit topologies, these power amplifiers achieved on wafer, a linear gain of more than 18 dB over the 26-36 GHz frequency range, with an output power at 1 dB gain compression of P/sub -1 dB/=29.5 dBm (900 mW) and a saturated output power above 1 watt (30.1 dBm), for a chip size of only 2.25 mm/sup 2/ (1.25/spl times/1.8 mm/sup 2/). To our knowledge, this is the highest output power and gain densities per chip area (i.e. 400-440 mW/mm/sup 2/ and 8 dB/mm/sup 2/) ever reported at Ka-band for any GaAs PHEMT MMIC power amplifier.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MMIC; gallium arsenide; integrated circuit design; 0.25 micron; 1 W; 1.25 mm; 1.8 mm; 26 to 36 GHz; 4 in; GaAs; GaAs PHEMT technology; Ka-band applications; PHEMT MMIC power amplifier; high power amplifier MMICs; pseudomorphic HEMT; ultra compact MMICs; Appropriate technology; Circuit topology; Gain; Gallium arsenide; High power amplifiers; MMICs; PHEMTs; Power amplifiers; Power generation; Production;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest

Conference_Location

Monterey, California, USA

ISSN

1064-7775

Print_ISBN

0-7803-7447-9

Type

conf

DOI

10.1109/GAAS.2002.1049025

Filename

1049025