Title :
Multi-stage G-band (140-220 GHz) InP HBT amplifiers
Author :
Urteaga, M. ; Scott, D. ; Krishnan, S. ; Wei, Y. ; Dahlstrom, M. ; Griffith, Z. ; Parthasarathy, N. ; Rodwell, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We report three-stage monolithic amplifiers for the 140-220 GHz frequency band. Two designs have been fabricated in an InAlAs/InGaAs transferred-substrate HBT technology. The first design exhibited a small-signal gain of 12.0 dB at 170 GHz, and the second design exhibited a gain of 8.5 dB at 195 GHz.
Keywords :
III-V semiconductors; bipolar MIMIC; heterojunction bipolar transistors; indium compounds; integrated circuit design; millimetre wave amplifiers; 12 dB; 140 to 220 GHz; 170 GHz; 195 GHz; 8.5 dB; InAlAs-InGaAs; InAlAs/InGaAs transferred-substrate HBT technology; InP; InP HBT amplifiers; millimeter-wave circuits; multi-stage G-band amplifiers; multi-stage tuned amplifier; three-stage monolithic amplifiers; Epitaxial growth; Fabrication; Frequency; Gain measurement; Gallium arsenide; Geometry; Heterojunction bipolar transistors; Indium phosphide; Polyimides; Substrates;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-7803-7447-9
DOI :
10.1109/GAAS.2002.1049026
