DocumentCode
2477202
Title
Investigation of the offset charge noise in single electron tunneling devices
Author
Ahlers, Franz-Josef ; Krupenin, V.A. ; Lotkhov, S.V. ; Niemeyer, J. ; Presnov, D.E. ; Scherer, Hansjorg ; Weimann, Thomas ; Wol, H.
Author_Institution
Physikalisch Tech. Bundesanstalt, Braunschweig, Germany
fYear
1996
fDate
17-21 June 1996
Firstpage
507
Lastpage
508
Abstract
The offset charge noise in metallic single electron tunneling (SET) devices fabricated on dielectric substrates was experimentally studied. On the basis of stereoscopic measurements of the low-frequency charge noise we show that the substrate makes an essential contribution to the total noise. We have observed that the intensity of the charge noise in SET transistors depends on the biasing dc current but is insensitive to temperature variations up to 300 mK.
Keywords
semiconductor device noise; single electron transistors; tunnel transistors; SET transistors; Si; biasing dc current; dielectric substrates; offset charge noise; single electron tunneling devices; stereoscopic measurements; temperature variations; Acoustical engineering; Circuit noise; Current measurement; Dielectric substrates; Electrons; Fluctuations; Low-frequency noise; Noise measurement; Temperature dependence; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 1996 Conference on
Conference_Location
Braunschweig, Germany
Print_ISBN
0-7803-3376-4
Type
conf
DOI
10.1109/CPEM.1996.547320
Filename
547320
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